Basic Info.
Model NO.
6Inch Dummy Grade
Specification
Purity>99.9999%
Product Description
SIC Silicon Carbide Conductive, Semi-Insulating Substrate Wafers (Customizable) ★2" 4"6" 8" Conductive Silicon Carbide Substrate Wafers Silicon Carbide (SiC) is a new type of compound semiconductor material with superior performance. Silicon carbide semiconductors have excellent properties such as large bandgap width (about 3 times that of silicon), high critical field strength (about 10 times that of silicon), and high thermal conductivity (about 3 times that of silicon). They are ideal semiconductor materials for making high-temperature, high-frequency and high-power power electronic devices (power chips). At the same time, it is also an excellent semiconductor material second only to diamond. At present, we provide standard 2, 4, 6, and 8-inch silicon carbide substrate wafers. Used for the production of Schottky diodes (SBD), metal oxide semiconductor field effect transistors (MOSFET), junction field effect transistors (JFET) and bipolar junction transistors (BJT). These power electronic devices can be widely used in green energy and energy-saving systems including solar inverters, wind power generation and energy storage, hybrid power, electric vehicles, charging piles, smart grids, and household appliances.
★2" 4" 6" 8" inch high-purity semi-insulating silicon carbide single crystal substrates are mainly used in 5G communications, radar systems, seekers, satellite communications, fighter aircraft and other fields. They have the advantages of improving radio frequency range, ultra-long-distance identification, anti-interference, and high-speed, large-capacity information transmission. They are regarded as the most ideal substrate for making microwave power devices.
6 Inch N-type SiC substrate wafer
No. | Items | Unit | Ultra-P Grade | Production Grade | Research Grade | Dummy Grade |
1.Boule Parameters |
1.1 | Poly type | -- | 4H |
1.2 | Surface orientation error | ° | 4° toward <11-20>±0.15° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° |
2.Electrical Parameters |
2.1 | dopant | cm-³ | n-type Nitrogen |
2.2 | resistivity | ohm ·cm | 0.016~0.024ohm ·cm | 0.015~0.025ohm ·cm | 0.015~0.025ohm ·cm | NA |
3.Mechanical Parameters |
3.1 | diameter | mm | 150 ±0.25 mm |
3.2 | hickness | μm | 350±25μm |
3.3 | Primary flat orientation | ° | [1-100]±5° |
3.4 | Primary flat length | mm | 47.5±1.5mm | 47.5±2.5mm | 47.5±2.5mm | 47.5±2.5mm |
3.5 | LTV | μm | ≤2μm(10mm*10mm) | ≤5μm(10mm*10mm) | ≤10μm(10mm*10mm) | ≤15μm(10mm*10mm) |
3.6 | TTV | μm | ≤5μm | ≤10 μm | ≤15 μm | ≤20 μm |
3.7 | Bow | μm | -15 μm~15 μm | -25 μm~25 μm | -45 μm~45 μm | -65 μm~65 μm |
3.8 | Warp | μm | ≤20μm | ≤35μm | ≤50μm | ≤70μm |
3.9 | (AFM)Front(Si-face)Roughness | nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
4.Structure |
4.1 | micropipe density | ea/cm² | ≤0.15 ea/cm² | ≤0.5 ea/cm² | ≤1 ea/cm² | ≤2 ea/cm² |
4.2 | metal content | atoms/cm² | ≤5E10 atoms/cm² | ≤1E11 atoms/cm² | ≤1E11 atoms/cm² | NA |
4.3 | TSD | ea/cm² | ≤100ea/cm² | ≤300ea/cm² | ≤500ea/cm² | NA |
4.4 | BPD | ea/cm² | ≤600ea/cm² | ≤1000ea/cm² | ≤1500ea/cm² | NA |
5.Front Quality |
5.1 | front | -- | Si | Si | Si | Si |
5.2 | surface finish | -- | Si-face CMP | Si-face CMP | Si-face CMP | Si-face CMP |
5.3 | particle | ea/wafer | ≤60(size≥0.3 μm) | ≤100(size≥0.3 μm) | NA | NA |
5.4 | scratches | ea/mm | ≤2,Total Length≤1/2*Diameter | ≤5,Total Length≤Diameter | NA | NA |
5.5 | chips/indents/cracks/stai | -- | None | None | None | NA |
5.6 | Polytype areas | -- | None | ≤0.5%Cumulative area) | ≤2%Cumulative area) | ≤5%Cumulative area) |
5.7 | front marking | -- | None | None | None | None |
6.Back Quality |
6.1 | back finish | -- | C-face polished |
6.2 | scratches | ea/mm | ≤5,Total Length≤Diameter | NA | NA | NA |
6.3 | Back defects edge | -- | None | None | None | NA |
6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra ≤5nm | Ra ≤5nm | Ra ≤5nm |
7.Edge |
7.1 | Wafer Edge | -- | Chamfer | Chamfer | Chamfer | Chamfer |
8.Packaging |
8.1 | Packaging | -- | Epi-ready with vacuum packaging |
8.2 | Packaging | -- | Multi-waferorSingle wafer cassette packaging |
SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD. |
Address:
No. 666, Tianmushan West Road, Yuhang District, Hangzhou, Zhejiang, China
Business Type:
Manufacturer/Factory, Trading Company
Business Range:
Chemicals
Company Introduction:
Hangzhou HC Jingrui Technology Co., Ltd. is located in Hangzhou, which is known as the "Silicon Valley of Paradise". It is a professional semiconductor material solution provider, committed to providing global customers with the most cost-effective semiconductor material solutions. The company has a strong technical R& D team, composed of graduate students and doctors, with a diligent team and strong R& D capabilities. The company technical backbones have been engaged in material preparation and related equipment design and development for many years, and have in-depth research on the physical, chemical and electrical properties of materials, and material preparation processes. The accumulation of years of theoretical accumulation and practical experience of scientific and technological personnel has enabled the company to have unique insights and unique advantages in the development of related materials and equipment, while ensuring that the company′s product performance and equipment design solutions meet the actual technical and process requirements of users. The company insists on "winning customers with quality and innovation, serving customers with professionalism and efficiency", customer trust is our driving force, customer requirements are our direction, customer satisfaction is our goal, and we strive to become a leader in the semiconductor material segment!